common anode silicon dual switching diode this common anode silicon epitaxial planar dual diode is designed for use in ultra high speed switching applications. this device is housed in the sc70 package which is designed for low power surface mount applications. ? fast t rr , < 10 ns ? low c d , < 15 pf ? available in 8 mm tape and reel use m1ma141/2wat1 to order the 7 inch/3000 unit reel. use m1ma141/2wat3 to order the 13 inch/10,000 unit reel. maximum ratings (t a = 25 c) rating symbol value unit reverse voltage m1ma141wat1 v r 40 vdc g m1ma142wat1 r 80 peak reverse voltage m1ma141wat1 v rm 40 vdc g m1ma142wat1 rm 80 forward current single i f 100 madc dual f 150 peak forward current single i fm 225 madc dual fm 340 peak forward surge current single i fsm (1) 500 madc g dual i fsm 750 thermal characteristics rating symbol max unit power dissipation p d 150 mw junction temperature t j 150 c storage temperature t stg 55 ~ +150 c electrical characteristics (t a = 25 c) characteristic symbol condition min max unit reverse voltage leakage current m1ma141wat1 i r v r = 35 v e 0.1 m adc gg m1ma142wat1 r v r = 75 v e 0.1 m forward voltage v f i f = 100 ma e 1.2 vdc reverse breakdown voltage m1ma141wat1 v r i r = 100 m a 40 e vdc g m1ma142wat1 r r m 80 e diode capacitance c d v r = 0, f = 1.0 mhz e 15 pf reverse recovery time (figure 1) t rr (2) i f = 10 ma, v r = 6.0 v, r l = 100 w , i rr = 0.1 i r e 10 ns 1. t = 1 sec 2. t rr test circuit preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 3 433 publication order number: m1ma141wat1/d m1ma141wat1 m1ma142wat1 case 41904, style 4 sc70/sot323 on semiconductor preferred devices 1 2 3 anode 3 12 cathode
m1ma141wat1 m1ma142wat1 http://onsemi.com 434 a r l t r t p t 10% 90% v r t p = 2 m s t r = 0.35 ns i f t rr t i rr = 0.1 i r i f = 10 ma v r = 6 v r l = 100 w recovery time equivalent test circuit input pulse output pulse figure 1. recovery time equivalent test circuit 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 v r , reverse voltage (volts) 0.64 0.6 0.56 0.52 c d , diode capacitance (pf) 2468 figure 2. forward voltage figure 3. reverse current figure 4. diode capacitance t a = -40 c t a = 25 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , reverse current ( m a) mn x marking symbol type no. 141wa 142wa symbol mn mo device marking e example the axo represents a smaller alpha digit date code. the date code indicates the actual month in which the part was manufactured .
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